http://www.ncepower.com
Pb Free Product
NCE80H11
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic diagram
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