NCE N-Channel Enhancement Mode Power MOSFET
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Pb Free Product
NCE75H26T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H26...
Description
http://www.ncepower.com
Pb Free Product
NCE75H26T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H26T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
General Features
● VDSS =75V,ID =260A RDS(ON) < 3mΩ @ VGS=10V (Typ:2.3 mΩ)
Schematic diagram
● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Application
● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H26T
NCE75H26T
TO-247
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
ID (100℃)
IDM PD
Single pulse avalanche energy (Note 3)
EAS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
Limit
75 ±20 260 200 1060 385 2.57 2200 13
Unit
V V A A A W W/℃ mJ V/ns
Wuxi NCE Power Semiconductor Co., Ltd
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