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IPD90N06S4L-05 Dataheets PDF



Part Number IPD90N06S4L-05
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD90N06S4L-05 DatasheetIPD90N06S4L-05 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon IPD90N06S4L-05 Product Summary V DS R DS(on),max ID 60 V 4.6 mΩ 90 A PG-TO252-3-11 Type IPD90N06S4L-05 Package Marking PG-TO252-3-11 4N06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon IPD90N06S4L-05 Product Summary V DS R DS(on),max ID 60 V 4.6 mΩ 90 A PG-TO252-3-11 Type IPD90N06S4L-05 Package Marking PG-TO252-3-11 4N06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 80 360 135 90 ±16 107 -55 ... +175 55/175/56 Unit A mJ A V W °C − Rev. 1.0 page 1 2009-03-24 IPD90N06S4L-05 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.4 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=60µA I DSS V DS=60V, V GS=0V, T j=25°C V DS=60V, V GS=0V, T j=125°C2) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.5V, I D=45A V GS=10V, I D=90A 60 - -V 1.2 1.7 2.2 - 0.01 1 µA - 5 100 - - 100 nA - 5.3 8.0 mΩ - 3.7 4.6 Rev. 1.0 page 2 2009-03-24 IPD90N06S4L-05 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol Conditions C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=90A, R G=3.5Ω Q gs Q gd Qg V plateau V DD=48V, I D=90A, V GS=0 to 10V IS I S,pulse V SD T C=25°C V GS=0V, I F=90A, T j=25°C t rr V R=30V, I F=90A, di F/dt =100A/µs min. Values typ. Unit max. - 6290 8180 pF - 1350 1755 - 60 120 - 14 - ns -4- 80 - 13 - - 23 30 nC - 8 16 - 83 110 - 3.7 - V - - 90 A - - 360 0.6 0.95 1.3 V - 36 - ns Reverse recovery charge2) Q rr - 41 - nC 1) Current is limited by bondwire; with an R thJC = 1.4K/W the chip is able to carry 113A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 IPD90N06S4L-05 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS ≥ 6 V 120 100 P tot [W] I D [A] 100 80 80 60 60 40 40 20 20 0 0 50 100 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 150 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 100 0.5 10-1 0.1 0.05 0.01 10-2 single pulse 200 1 0.1 Rev. 1.0 1 10 V DS [V] 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-03-24 IPD90N06S4L-05 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS 360 320 10 V 6V 20 4 V 4.5 V 5V 18 I D [A] R DS(on) [mΩ] 280 16 5 V 14 240 12 200 4.5 V 10 160 8 120 4 V 6 6V 80 4 10 V 40 2 0 0123456 V DS [V] 0 0 90 180 270 I D [A] 360 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 90 A; V GS = 10 V 360 320 -55 °C 25 °C 7 280 6 240 175 °C 5 200 I D [A] R DS(on) [mΩ] 160 4 120 80 3 40 0 0123456 V GS [V] 2 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 5 2009-03-24 V GS(th) [V] C [pF] 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2.5 2 600 µA 1.5 60 µA 1 0.5 IPD90N06S4L-05 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss 103 Coss 102 Crss 0 -60 -20 20 60 100 140 180 T j [°C] 101 0 5 10 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start) 100 102 175 °C 25 °C 101 25 °C 100 °C 150 °C 10 I F [A] I AV [A] 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] 1 0.1 Rev. 1.0 page 6 1 10 100 1000 t AV [µs] 2009-03-24 IPD90N06S4L-05 13 Avalanche energy E AS = f(T j); I D = 45 A 14 Drain-source breakdown voltage V BR(DSS) = f(T.


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