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IPD90N06S4L-06 Dataheets PDF



Part Number IPD90N06S4L-06
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD90N06S4L-06 DatasheetIPD90N06S4L-06 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon IPD90N06S4L-06 Product Summary V DS R DS(on),max ID 60 V 6.3 mΩ 90 A PG-TO252-3-11 Type IPD90N06S4L-06 Package Marking PG-TO252-3-11 4N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain curren.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon IPD90N06S4L-06 Product Summary V DS R DS(on),max ID 60 V 6.3 mΩ 90 A PG-TO252-3-11 Type IPD90N06S4L-06 Package Marking PG-TO252-3-11 4N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 63 360 67 90 ±16 79 -55 ... +175 55/175/56 Unit A mJ A V W °C − Rev. 1.0 page 1 2009-03-24 IPD90N06S4L-06 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 1.9 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=40µA I DSS V DS=60V, V GS=0V, T j=25°C V DS=60V, V GS=0V, T j=125°C2) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.5V, I D=45A V GS=10V, I D=90A 60 - -V 1.2 1.7 2.2 - 0.01 1 µA - 5 100 - - 100 nA - 7.4 11.0 mΩ - 5.0 6.3 Rev. 1.0 page 2 2009-03-24 IPD90N06S4L-06 Parameter Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current1) Diode pulse current1) Diode forward voltage Reverse recovery time1) Symbol Conditions C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=90A, R G=3.5Ω Q gs Q gd Qg V plateau V DD=48V, I D=90A, V GS=0 to 10V IS I S,pulse V SD T C=25°C V GS=0V, I F=90A, T j=25°C t rr V R=30V, I F=90A, di F/dt =100A/µs min. Values typ. Unit max. - 4370 5680 pF - 980 1270 - 45 90 - 10 - ns -3- 50 -8- - 17 22 nC - 6 12 - 58 75 - 4.0 - V - - 90 A - - 360 0.6 0.95 1.3 V - 39 - ns Reverse recovery charge1) Q rr - 38 - nC 1) Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 P tot [W] I D [A] 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 90 80 70 60 50 40 30 20 10 0 0 50 100 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 150 2 Drain current I D = f(T C); V GS ≥ 6 V 100 IPD90N06S4L-06 80 60 40 20 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 200 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 0.5 100 0.1 10-1 0.05 0.01 10-2 single pulse 1 0.1 Rev. 1.0 1 10 V DS [V] 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-03-24 IPD90N06S4L-06 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 360 10 V 320 280 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS 20 18 6V 16 4 V 4.5 V 5V 240 14 I D [A] R DS(on) [mΩ] 200 12 5V 160 10 120 80 4.5 V 4V 8 6 6V 10 V 40 4 0 0123456 V DS [V] 2 0 90 180 270 I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 90 A; V GS = 10 V 360 -55 °C 25 °C 10 320 9 280 8 240 7 200 175 °C 6 160 120 5 I D [A] R DS(on) [mΩ] 80 4 360 40 0 0123456 V GS [V] 3 2 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 5 2009-03-24 V GS(th) [V] C [pF] 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2.5 2 400 µA 1.5 40 µA 1 0.5 IPD90N06S4L-06 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss 103 Coss 102 Crss 0 -60 -20 20 60 100 140 180 T j [°C] 101 0 5 10 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start) 100 102 25 °C 100 °C 150 °C 10 I F [A] I AV [A] 175 °C 25 °C 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] 0.1 0.1 Rev. 1.0 page 6 1 10 100 1000 t AV [µs] 2009-03-24 13 Avalanche energy E AS = f(T j); I D = 45 A 80 IPD90N06S4L-06 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 66 E AS [mJ] V BR(DSS) [V] 64 60 62 40 60 20 58 0 25 75 125 T j .


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