Document
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon
IPD90N06S4L-06
Product Summary V DS R DS(on),max ID
60 V 6.3 mΩ 90 A
PG-TO252-3-11
Type IPD90N06S4L-06
Package
Marking
PG-TO252-3-11 4N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 90
63
360 67 90 ±16 79 -55 ... +175 55/175/56
Unit A
mJ A V W °C −
Rev. 1.0
page 1
2009-03-24
IPD90N06S4L-06
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area2)
min.
Values typ.
Unit max.
- - 1.9 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=40µA
I DSS
V DS=60V, V GS=0V, T j=25°C
V DS=60V, V GS=0V, T j=125°C2)
I GSS
V GS=16V, V DS=0V
R DS(on) V GS=4.5V, I D=45A
V GS=10V, I D=90A
60 -
-V
1.2 1.7 2.2
- 0.01 1 µA
- 5 100
- - 100 nA - 7.4 11.0 mΩ - 5.0 6.3
Rev. 1.0
page 2
2009-03-24
IPD90N06S4L-06
Parameter
Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current1) Diode pulse current1)
Diode forward voltage
Reverse recovery time1)
Symbol
Conditions
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0V, V DS=25V, f =1MHz
V DD=30V, V GS=10V, I D=90A, R G=3.5Ω
Q gs Q gd Qg V plateau
V DD=48V, I D=90A, V GS=0 to 10V
IS I S,pulse
V SD
T C=25°C
V GS=0V, I F=90A, T j=25°C
t rr
V R=30V, I F=90A, di F/dt =100A/µs
min.
Values typ.
Unit max.
- 4370 5680 pF - 980 1270 - 45 90 - 10 - ns -3- 50 -8-
- 17 22 nC - 6 12 - 58 75 - 4.0 - V
- - 90 A - - 360 0.6 0.95 1.3 V
- 39 - ns
Reverse recovery charge1)
Q rr
- 38 - nC
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
P tot [W] I D [A]
1 Power dissipation P tot = f(T C); V GS ≥ 6 V
90
80
70
60
50
40
30
20
10
0 0 50 100 T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
150
2 Drain current I D = f(T C); V GS ≥ 6 V
100
IPD90N06S4L-06
80
60
40
20
0 200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
200
I D [A] Z thJC [K/W]
100 10
1 µs 10 µs 100 µs
1 ms
0.5
100
0.1
10-1
0.05
0.01
10-2 single pulse
1 0.1
Rev. 1.0
1 10 V DS [V]
100
10-3 10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-03-24
IPD90N06S4L-06
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
360
10 V
320
280
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS
20
18
6V
16
4 V 4.5 V
5V
240 14
I D [A] R DS(on) [mΩ]
200 12
5V
160 10
120 80
4.5 V 4V
8 6
6V 10 V
40 4
0 0123456 V DS [V]
2 0
90 180 270 I D [A]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 90 A; V GS = 10 V
360
-55 °C 25 °C
10
320 9
280 8
240
7
200
175 °C
6 160
120 5
I D [A] R DS(on) [mΩ]
80 4
360
40
0 0123456 V GS [V]
3
2 -60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2009-03-24
V GS(th) [V] C [pF]
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
2.5
2
400 µA
1.5
40 µA
1
0.5
IPD90N06S4L-06
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
104
Ciss
103
Coss
102
Crss
0 -60 -20 20 60 100 140 180 T j [°C]
101 0
5 10 15 20 25 30 V DS [V]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start)
100
102
25 °C 100 °C
150 °C
10
I F [A] I AV [A]
175 °C 25 °C
101
1
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
0.1 0.1
Rev. 1.0
page 6
1 10 100 1000 t AV [µs]
2009-03-24
13 Avalanche energy E AS = f(T j); I D = 45 A
80
IPD90N06S4L-06
14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA
66
E AS [mJ] V BR(DSS) [V]
64 60
62 40
60
20 58
0 25 75 125 T j .