C2062

GuangDong Yuejing High Technology CO.,LTD. ■■APPLICATION：High-Gain Amplifier. C2062 —NPN silicon — ■■MAXIMUM RATING（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Collector current IC 300 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150 ℃ ■■ ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Common Emitter DC Current Gain hFE 10K VCE= 3 V，Ic=100 mA Collector Cut-off Current ICBO 0.1 µA VCB= 30 V，IE=0 Emitter Cut-off Current IEBO 0.1 µA VEB= 10 V，Ic=0 Collector-Base Breakdown Voltage BVCBO 40 V Ic= 0.1 mA，IE=0 Collector-Emitter Breakdown Voltage BVCEO 30 V Ic= 10 mA，IB=0 Emitter-Base Breakdown Voltage BVEBO 10 V IE= 0.1mA，Ic=0 Collector-Emitter Saturation Voltage VCE(sat) 1 V Ic= 100 mA，IB= 0.1 mA Gain bandwidth product fT 200 MHz Ic= 10 mA，VCE= 5 V, f = 100 MHz Common Base Output Capacitance Cob 3.5 PF VCB= 30 V, IE=0, f = 1 MHz B：Base R2 C：Collector ■■hFE Classification Classification hFE 4000~20K E：Emitter ...