D592

Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A s Features q Large collector power dissipation PC. q Low collector to emitter saturation voltage VCE(sat). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SD592 base voltage 2SD592A Collector to 2SD592 emitter voltage 2SD592A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 30 60 25 50 5 1.5 1 750 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 13.5±0.5 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base 2SD592 voltage 2SD592A Symbol ICBO VCBO Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 min typ max Unit 0.1 µA 30 V 60 Collector to emitter 2SD592 voltage 2SD592A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob IC = 2mA, IB = 0 25 50 V IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 5 85 160 340 50 0.2 0.4 0.85 1.2 V V V VCB = 10V, IE = –50mA, f = 2...