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IPP80N04S4L-04 Dataheets PDF



Part Number IPP80N04S4L-04
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPP80N04S4L-04 DatasheetIPP80N04S4L-04 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 Product Summary V DS R DS(on),max (SMD version) ID 40 V 4.0 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S4L-04 IPI80N04S4L-04 IPP80N04S4L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N04L04 4N04L04 4N04L04 Maximum.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 Product Summary V DS R DS(on),max (SMD version) ID 40 V 4.0 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S4L-04 IPI80N04S4L-04 IPP80N04S4L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N04L04 4N04L04 4N04L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 80 80 320 100 80 +20/-16 71 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2010-04-13 Parameter Symbol IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 Conditions min. Values typ. Unit max. Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA - - minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=35µA I DSS V DS=40V, V GS=0V V DS=18V, V GS=0V, T j=85°C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=4.5V, I D=40A V GS=4.5V, I D=40A, SMD version V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version - - 2.1 K/W - - 62 - - 62 - - 40 40 - -V 1.2 1.7 2.2 - 0.02 1 µA - 1 20 - - 100 nA - 5.1 6 mΩ - 4.8 5.7 - 3.7 4.3 - 3.4 4.0 Rev. 1.0 page 2 2010-04-13 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 Conditions min. Values typ. Unit max. C iss C oss Crss V GS=0V, V DS=25V, f =1MHz - 3610 4690 pF - 650 840 - 30 69 t d(on) - 7 - ns tr V DD=20V, V GS=10V, - 12 - t d(off) I D=80A, R G=3.5Ω - 22 - t f - 31 - Q gs Q gd Qg V plateau V DD=32V, I D=80A, V GS=0 to 10V - 12 16 nC - 5 12 - 46 60 - 3.2 - V IS I S,pulse V SD T C=25°C V GS=0V, I F=80A, T j=25°C t rr V R=20V, I F=50A, di F/dt =100A/µs - - 80 A - - 320 - 0.9 1.3 V - 39 - ns Reverse recovery charge2) Q rr - 35 - nC 1) Current is limited by bondwire; with an R thJC = 2.1K/W the chip is able to carry 98A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2010-04-13 1 Power dissipation P tot = f(T C); V GS ≥ 6 V IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 2 Drain current I D = f(T C); V GS ≥ 6 V; SMD 75 80 62.5 50 60 P tot [W] I D [A] 37.5 25 12.5 40 20 0 0 50 100 150 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 200 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 100 0.5 10-1 0.1 0.05 0.01 10-2 single pulse 1 0.1 Rev. 1.0 1 10 V DS [V] 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-04-13 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 300 10 V 5V 240 180 120 4.5 V 4V 15 13 11 3.5 V 9 7 4V I D [A] R DS(on) [mΩ] 60 0 0 3.5 V 3V 2.5 V 123 V DS [V] 4 4.5 V 5 5V 10 V 3 0 30 60 90 120 150 I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD 240 6.5 -55 °C 6 180 25 °C 175 °C 5.5 5 I D [A] R DS(on) [mΩ] 4.5 120 4 3.5 60 3 2.5 02 12345 -60 -20 20 60 100 140 180 V GS [V] T j [°C] Rev. 1.0 page 5 2010-04-13 V GS(th) [V] C [pF] 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2 1.75 1.5 1.25 350 µA 35 µA 1 IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss 103 Coss 102 Crss 0.75 -60 -20 20 60 100 140 180 T j [°C] 101 0 5 10 15 20 25 30 V DS [V] 11 Typical.


IPI80N04S4L-04 IPP80N04S4L-04 IPB80N04S4-04


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