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IPI90N04S4-02 Dataheets PDF



Part Number IPI90N04S4-02
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPI90N04S4-02 DatasheetIPI90N04S4-02 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 Product Summary V DS R DS(on),max (SMD version) ID 40 V 2.1 mΩ 90 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB90N04S4-02 IPI90N04S4-02 IPP90N04S4-02 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0402 4N0402 4N0402 Maximum ratings,.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 Product Summary V DS R DS(on),max (SMD version) ID 40 V 2.1 mΩ 90 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB90N04S4-02 IPI90N04S4-02 IPP90N04S4-02 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0402 4N0402 4N0402 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 90 360 475 90 ±20 150 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2010-07-01 IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.0 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=95µA I DSS V DS=40V, V GS=0V V DS=18V, V GS=0V, T j=85°C2) I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=90A V GS=10V, I D=90A, SMD version 40 - -V 2.0 3.0 4.0 - 0.04 1 µA - 1 20 - - 100 nA - 2.3 2.5 mΩ - 1.9 2.1 Rev. 1.1 page 2 2010-07-01 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol Conditions IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 min. Values typ. Unit max. C iss C oss Crss V GS=0V, V DS=25V, f =1MHz - 7250 9430 pF - 1630 2120 - 55 127 t d(on) - 23 - ns tr V DD=20V, V GS=10V, - 13 - t d(off) I D=90A, R G=3.5Ω - 27 - t f - 26 - Q gs Q gd Qg V plateau V DD=32V, I D=90A, V GS=0 to 10V - 39 51 nC - 12 28 - 91 118 - 5.8 - V IS I S,pulse V SD T C=25°C V GS=0V, I F=90A, T j=25°C t rr V R=20V, I F=50A, di F/dt =100A/µs - - 90 A - - 360 - 0.9 1.3 V - 53 - ns Reverse recovery charge2) Q rr - 65 - nC 1) Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 200A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2010-07-01 1 Power dissipation P tot = f(T C); V GS ≥ 6 V IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 2 Drain current I D = f(T C); V GS ≥ 6 V; SMD 175 100 150 80 125 100 60 P tot [W] I D [A] 75 40 50 20 25 00 0 50 100 150 200 0 50 100 150 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 µs 200 I D [A] Z thJC [K/W] 100 10 10 µs 100 µs 1 ms 100 0.5 10-1 0.1 0.05 0.01 10-2 single pulse 1 0.1 Rev. 1.1 1 10 V DS [V] 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-07-01 I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 360 10 V 7V 300 240 180 120 60 0 012 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 360 IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 8 5.5 V 6.5 V 7 6 6V 5 5.5 V 5V 4 3 2 6V 6.5 V 7V 10 V 1 3 4 0 40 80 120 160 I D [A] 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 90 A; V GS = 10 V; SMD 3.5 I D [A] R DS(on) [mΩ] 300 240 180 120 60 0 3 Rev. 1.1 3 2.5 175 °C 25 °C -55 °C 456 V GS [V] 2 1.5 7 1 -60 -20 20 60 100 140 180 T j [°C] page 5 2010-07-01 V GS(th) [V] C [pF] 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 3.5 3 950 µA 95 µA 2.5 2 IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss Coss 103 102 Crss 1.5 -60 -20 20 60 100 140 180 T j [°C] 101 0 5 10 15 20 V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characterist.


IPB90N04S4-02 IPI90N04S4-02 IPP90N04S4-02


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