Document
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
Product Summary V DS R DS(on),max (SMD version) ID
40 V 2.1 mΩ 90 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB90N04S4-02 IPI90N04S4-02 IPP90N04S4-02
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0402 4N0402 4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 90
90
360 475 90 ±20 150 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.1
page 1
2010-07-01
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.0 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=95µA
I DSS
V DS=40V, V GS=0V
V DS=18V, V GS=0V, T j=85°C2)
I GSS R DS(on)
V GS=20V, V DS=0V V GS=10V, I D=90A
V GS=10V, I D=90A, SMD version
40 -
-V
2.0 3.0 4.0
- 0.04 1 µA
- 1 20
- - 100 nA - 2.3 2.5 mΩ
- 1.9 2.1
Rev. 1.1
page 2
2010-07-01
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
min.
Values typ.
Unit max.
C iss C oss Crss
V GS=0V, V DS=25V, f =1MHz
- 7250 9430 pF - 1630 2120 - 55 127
t d(on)
- 23 - ns
tr
V DD=20V, V GS=10V,
-
13
-
t d(off)
I D=90A, R G=3.5Ω
- 27 -
t f - 26 -
Q gs Q gd Qg V plateau
V DD=32V, I D=90A, V GS=0 to 10V
- 39 51 nC - 12 28 - 91 118 - 5.8 - V
IS I S,pulse
V SD
T C=25°C
V GS=0V, I F=90A, T j=25°C
t rr
V R=20V, I F=50A, di F/dt =100A/µs
- - 90 A - - 360 - 0.9 1.3 V
- 53 - ns
Reverse recovery charge2)
Q rr
- 65 - nC
1) Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 200A at 25°C.
2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.1
page 3
2010-07-01
1 Power dissipation P tot = f(T C); V GS ≥ 6 V
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
2 Drain current I D = f(T C); V GS ≥ 6 V; SMD
175 100
150 80
125
100 60
P tot [W] I D [A]
75 40
50 20
25
00
0 50 100 150 200
0 50 100 150
T C [°C]
T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p
1000
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
1 µs
200
I D [A] Z thJC [K/W]
100 10
10 µs 100 µs 1 ms
100
0.5
10-1
0.1 0.05
0.01
10-2
single pulse
1 0.1
Rev. 1.1
1 10 V DS [V]
100
10-3 10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2010-07-01
I D [A] R DS(on) [mΩ]
5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS
360
10 V
7V
300
240
180
120
60
0 012 V DS [V]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
360
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS
8
5.5 V
6.5 V
7
6
6V 5
5.5 V 5V
4 3 2
6V
6.5 V 7V 10 V
1 3 4 0 40 80 120 160
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V; SMD
3.5
I D [A] R DS(on) [mΩ]
300 240 180 120
60 0 3
Rev. 1.1
3
2.5
175 °C 25 °C -55 °C
456 V GS [V]
2
1.5
7
1 -60 -20 20
60 100 140 180
T j [°C]
page 5
2010-07-01
V GS(th) [V] C [pF]
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
4
3.5
3 950 µA
95 µA
2.5
2
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
104
Ciss
Coss
103
102
Crss
1.5 -60 -20 20 60 100 140 180 T j [°C]
101 0
5 10 15 20 V DS [V]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
12 Avalanche characterist.