D1850

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD1850 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCES VCEO VEBO PARAMETER i.cnCollector-Base Voltage .iscsemCollector-Emitter Voltage Collector-Emitter Voltage wwwEmitter-Base Voltage VALUE UNIT 1500 V 1500 V 700 V 7V IC Collector Current-Continuous 7A ICP Collector Current-Peak 20 A IBB Base Current- Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3A 3 W 120 150 ℃ Tstg Storage Temperature Range -55-150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD1850 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB=B 1.5A hFE-1 DC Current Gain IC= 1A; VCE= 5V 8.0 V 1.5 V 5 25 hFE-2 DC Current Gain IC= 6A; VCE= 5V 4.5 VCB= 1000V; IE= 0 ICBO Collector Cutoff Current i.cnfT Transition Frequency .iscsemSwitching Times, Resistive Load wwwts Storage Time VCB= 1500V; IE= 0 IC= 1A; VCE= 10V IC= 6A; IB1= 1.5A; IB2= -3A, VCC= 200...