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NCE2011E Dataheets PDF



Part Number NCE2011E
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE2011E DatasheetNCE2011E Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE2011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =11A RDS(ON) < 7Ω @ VGS=2.5V RDS(ON) < 9Ω @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead f.

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