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NCE3420 Dataheets PDF



Part Number NCE3420
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE3420 DatasheetNCE3420 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE3420 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Sur.

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http://www.ncepower.com Pb Free Product NCE3420 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●Uni-directional Load switch ●Bi-directional Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 3420 NCE3420 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 20 ±10 6 30 1.25 -55 To 150 100 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Min Typ Max Unit 20 22 -- 1 V μA Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS Pb Free Product NCE3420 VGS=±10V,VDS=0V - - ±100 nA VDS=VGS,ID=250μA VGS=2.5V, ID=4.0 A VGS=4.5V, ID=5.0A VDS=5V,ID=6A VDS=10V,VGS=0V, F=1.0MHz 0.5 0.7 - 27 - 20 - 25 1.0 35 27 - - 515 - 90 - 72 - V mΩ mΩ S PF PF PF VDD=10V, RL=1.7Ω VGS=10V,RGEN=3Ω VDS=10V,ID=6A,VGS=10V - 3 7.5 20 6 12 1 2 - nS nS nS nS nC nC nC VGS=0V,IS=1A - - 1.2 -- 2 V A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 http://www.ncepower.com Typical Electrical and Thermal Characteristics Pb Free Product NCE3420 Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 http://www.ncepower.com SOT-23 Package Information Pb Free Product NCE3420 Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 http://www.ncepower.com Pb Free Product NCE3420 Attention: ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. ■ NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. ■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should alwa.


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