NCE8205B

http://www.ncepower.com Pb Free Product NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment Application ● Battery protection ● Load switch ● Power management Tssop-8 top view Package Marking and Ordering Information Device Marking Device Device Package 8205B NCE8205B TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 20 ±12 6.5 25 1.5 -55 To 150 83 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Min Typ Ma...