NCE4403

http://www.ncepower.com Pb Free Product NCE4403 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-6.1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4.5V RDS(ON) <117mΩ @ VGS=-2.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Fast switching speed Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 4403 NCE4403 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -30 ±12 -6.1 -4.3 30 2.5 -55 To 150 Unit V V A A A W ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) Pb Free Product NCE4403 RθJA 50 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Conditi...