NCE4503

Product specification SOP8 Plastic-Encapsulate MOSFETS NCE4503 N-and P-Channel Enhancement Mode Power MOSFET DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. MARKING: 4503 SOP8 S1 1 z G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance from Junction to Ambient Operating Junction Temperature Storage Temperature Notes : a. These tests are performed with infinite heat sink. b.Pulse width by Max.junction temperature. Symbol VDS VGS ID IDM PD RθJA TJ TSTG N-Channel P-Channel 30 -30 ±20 ±20 6.9 -6.3 5.5 -5 20 -20 2.0 62.5 150 -55 ~+150 Unit V A W ℃/W ℃ http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 Product specification Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current Drain-source on-resistancec Forward transconductance Diode forward voltagec V(BR)DSS VGS(th) VGS=0, ID =250µA VGS=0, ID =-250µA VDS =VGS, ID =250µA VDS ...