IPD70N10S3L-12

OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested IPD70N10S3L-12 Product Summary V DS R DS(on),max ID 100 V 11.5 mΩ 70 A PG-TO252-3-11 Type IPD70N10S3L-12 Package Marking PG-TO252-3-11 QN10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single pulse I AS Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 70 48 280 410 70 ±16 125 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2008-02-12 IPD70N10S3L-12 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 1.2 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=83µA I DSS V DS=80V, V GS=0V, T j=25°C V...