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IPD220N06L3G Dataheets PDF



Part Number IPD220N06L3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPD220N06L3G DatasheetIPD220N06L3G Datasheet (PDF)

Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD220N06L3 G IPD220N06L3 G Product Summary V DS R DS(on),max ID 60 V 22 mΩ 30 A Package Marking PG-TO-252-3 220N06L Maximum ratings, at T j=25 °C, unless ot.

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Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD220N06L3 G IPD220N06L3 G Product Summary V DS R DS(on),max ID 60 V 22 mΩ 30 A Package Marking PG-TO-252-3 220N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Value 30 21 120 13 ±20 36 -55 ... 175 55/175/56 Unit A mJ V W °C Rev. 2.0 page 1 2008-12-09 IPD220N06L3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area4) min. Values typ. Unit max. - - 4.2 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=11 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=30 A - 1 100 nA - 17.8 22.0 mΩ V GS=4.5 V, I D=15 A - 27.4 39.8 Gate resistance Transconductance RG - g fs |V DS|>2|I D|R DS(on)max, I D=30 A 16 0.9 32 -Ω -S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2008-12-09 IPD220N06L3 G Parameter Symbol Conditions min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss C rss t d(on) tr t d(off) tf V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=30 A, R G=3 Ω - 1200 270 16 9 3 19 3 1600 pF 360 - ns - Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - 5 - nC Q gd Q sw Qg V DD=30 V, I D=30 A, V GS=0 to 4.5 V - 257 10 V plateau - 4.1 - V Q oss V DD=30 V, V GS=0 V - 13 17 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=30 V, I F=30A, di F/dt =100 A/µs - - 30 A - - 120 - 1.0 1.2 V - 27 - ns - 23 - nC 5) See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2008-12-09 1 Power dissipation P tot=f(T C) 40 2 Drain current I D=f(T C); V GS≥10 V 40 IPD220N06L3 G 30 30 P tot [W] I D [A] 20 20 10 10 0 0 50 100 T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 150 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 200 I D [A] Z thJC [K/W] 102 limited by on-state resistance 101 100 1 µs 10 µs 100 µs 1 ms DC 0.5 100 0.2 0.1 0.05 0.02 0.01 single pulse 10-1 10-1 Rev. 2.0 100 101 V DS [V] 10-1 102 10-5 page 4 10-4 10-3 10-2 t p [s] 10-1 2008-12-09 IPD220N06L3 G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 120 100 10 V 6V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 40 4 V 4.5 V 5 V 6V I D [A] R DS(on) [mΩ] 80 5V 60 40 4.5 V 4V 20 3.5 V 3V 0 0123 V DS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 4 30 20 10 V 10 5 0 20 40 60 80 I D [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 100 120 50 50 40 40 30 30 20 20 I D [A] g fs [S] 10 10 175 °C 25 °C 0 012345 V GS [V] 0 0 10 20 30 40 50 60 I D [A] Rev. 2.0 page 5 2008-12-09 IPD220N06L3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 50 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 2.5 45 40 2 35 110 µA R DS(on) [mΩ] V GS(th) [V] 30 25 max 1.5 11 µA 20 typ 1 15 10 0.5 5 0 -60 -20 20 60 100 140 180 T j [°C] 0 -60 -20 20 60 100 140 180 T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 104 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 103 102 101 0 Rev. 2.0 C [pF] I F [A] Ciss Coss Crss 20 40 V DS [V] 102 175 °C, 98% 25 °C 101 175 °C 25 °C, 98% 100 60 0.


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