Document
Type
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications
Type
IPD220N06L3 G
IPD220N06L3 G
Product Summary V DS R DS(on),max ID
60 V 22 mΩ 30 A
Package Marking
PG-TO-252-3 220N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Value
30 21 120 13 ±20 36 -55 ... 175 55/175/56
Unit A
mJ V W °C
Rev. 2.0
page 1
2008-12-09
IPD220N06L3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm² cooling area4)
min.
Values typ.
Unit max.
- - 4.2 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=11 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V, T j=25 °C
-
0.1
1 µA
V DS=60 V, V GS=0 V, T j=125 °C
-
10 100
Gate-source leakage current Drain-source on-state resistance
I GSS R DS(on)
V GS=20 V, V DS=0 V V GS=10 V, I D=30 A
- 1 100 nA - 17.8 22.0 mΩ
V GS=4.5 V, I D=15 A
- 27.4 39.8
Gate resistance Transconductance
RG -
g fs
|V DS|>2|I D|R DS(on)max, I D=30 A
16
0.9 32
-Ω -S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.0
page 2
2008-12-09
IPD220N06L3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss C oss C rss t d(on) tr t d(off) tf
V GS=0 V, V DS=30 V, f =1 MHz
V DD=30 V, V GS=10 V, I D=30 A, R G=3 Ω
-
1200 270 16
9 3 19 3
1600 pF 360
- ns -
Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs - 5 - nC
Q gd Q sw Qg
V DD=30 V, I D=30 A, V GS=0 to 4.5 V
-
257 10
V plateau
- 4.1 - V
Q oss
V DD=30 V, V GS=0 V
-
13 17 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
V SD
t rr Q rr
T C=25 °C
V GS=0 V, I F=30 A, T j=25 °C
V R=30 V, I F=30A, di F/dt =100 A/µs
- - 30 A - - 120
- 1.0 1.2 V
- 27 - ns - 23 - nC
5) See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2008-12-09
1 Power dissipation P tot=f(T C)
40
2 Drain current I D=f(T C); V GS≥10 V
40
IPD220N06L3 G
30 30
P tot [W] I D [A]
20 20
10 10
0 0 50 100 T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
150
0 200 0
50 100 150 T C [°C]
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
200
I D [A] Z thJC [K/W]
102
limited by on-state resistance
101
100
1 µs 10 µs
100 µs 1 ms DC
0.5
100 0.2
0.1 0.05 0.02 0.01 single pulse
10-1 10-1
Rev. 2.0
100 101
V DS [V]
10-1 102 10-5
page 4
10-4
10-3
10-2
t p [s]
10-1
2008-12-09
IPD220N06L3 G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
120
100
10 V
6V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
40
4 V 4.5 V 5 V
6V
I D [A] R DS(on) [mΩ]
80
5V
60
40 4.5 V
4V
20
3.5 V
3V
0 0123 V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
60
4
30
20
10 V
10 5 0 20 40 60 80
I D [A]
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
100 120
50
50 40
40 30
30
20 20
I D [A] g fs [S]
10
10
175 °C
25 °C
0 012345
V GS [V]
0 0 10 20 30 40 50 60 I D [A]
Rev. 2.0
page 5
2008-12-09
IPD220N06L3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V
50
10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
2.5
45
40 2
35 110 µA
R DS(on) [mΩ] V GS(th) [V]
30 25 max
1.5
11 µA
20 typ
1
15
10 0.5
5
0 -60 -20 20 60 100 140 180
T j [°C]
0 -60 -20 20 60 100 140 180 T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
103
102
101 0
Rev. 2.0
C [pF] I F [A]
Ciss Coss
Crss
20 40 V DS [V]
102
175 °C, 98% 25 °C
101 175 °C
25 °C, 98%
100 60 0.