IPI70N04S3-07

OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 Product Summary V DS R DS(on),max (SMD version) ID 40 V 6.2 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N04S3-07 IPI70N04S3-07 IPP70N04S3-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0407 3N0407 3N0407 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50 A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 58 280 145 ±20 79 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2007-05-03 IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 1.9 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA...