OptiMOS®-P2 Power-Transistor
Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C p...
OptiMOS®-P2 Power-
Transistor
Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09
Product Summary V DS R DS(on) (SMD Version) ID
-40 V 9.1 mW -70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB70P04P4-09 IPI70P04P4-09 IPP70P04P4-09
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4P0409 4P0409 4P0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V
Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=-36A
I AS -
V GS
-
P tot T C=25 °C
T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.3
page 1
Value
-72
-50
-288 24 -72 ±20 75 -55 ... +175 55/175/56
Unit A
mJ A V W °C
2011-02-14
IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 2 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area2)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source ...