Document
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested
IPB100N06S2L-05 IPP100N06S2L-05
Product Summary V DS R DS(on),max (SMD version) ID
55 V 4.4 mΩ 100 A
PG-TO263-3-2
PG-TO220-3-1
Type IPB100N06S2L-05 IPP100N06S2L-05
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-19003 PN06L05
PG-TO220-3-1 SP0002-18879 PN06L05
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature
T C=100 °C, V GS=10 V2)
I D,pulse T C=25 °C E AS I D= 80 A V GS P tot T C=25 °C T j, T stg
Value
100
100 400 810 ±20 300 -55 ... +175
Unit A
mJ V W °C
Rev. 1.0
page 1
2006-03-13
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area5)
IPB100N06S2L-05 IPP100N06S2L-05
min.
Values typ.
Unit max.
- - 0.5 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage
V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA
55 1.2
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
I DSS
V DS=55 V, V GS=0 V, T j=25 °C
V DS=55 V, V GS=0 V, T j=125 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=80 A
V GS=4.5 V, I D=80 A, SMD version
-
-
1.6
0.01
1 1 4.3 4.0
-V 2.0
1 µA
100 100 nA 5.9 mΩ 5.6
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A
- 3.5 4.7 mΩ
V GS=10 V, I D=80 A, SMD version
-
3.2 4.4
Rev. 1.0
page 2
2006-03-13
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
IPB100N06S2L-05 IPP100N06S2L-05
min.
Values typ.
Unit max.
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0 V, V DS=25 V, f =1 MHz
V DD=30 V, V GS=4.5 V, I D=100 A, R G=1.3 Ω
-
5660 1330 360
18 25 98 24
- pF - ns -
Q gs Q gd Qg V plateau
V DD=44 V, I D=100 A, V GS=0 to 10 V
-
19 25 nC 57 90 170 230 3.3 - V
IS I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=80 A, T j=25 °C
t rr
V R=30 V, I F=I S, di F/dt =100 A/µs
- - 100 A - - 400 - 0.9 1.3 V
- 65 80 ns
Reverse recovery charge2)
Q rr
- 125 160 nC
1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 185 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagram 13
4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-13
1 Power dissipation P tot = f(T C); V GS ≥ 4 V
2 Drain current I D = f(T C); V GS ≥ 10 V
IPB100N06S2L-05 IPP100N06S2L-05
350 120
P tot [W] I D [A]
300 100
250 80
200 60
150
40 100
50 20
00
0 50 100 150 200
0 50 100 150
T C [°C]
T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
100
1 µs 10 µs 100 µs 1 ms
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
100
0.5
10-1
0.1
0.05
200
I D [A] Z thJC [K/W]
10 10-2
0.01
1 0.1
Rev. 1.0
1 10 V DS [V]
single pulse
10-3 100 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
t p [s]
page 4
2006-03-13
I D [A] g fs [S]
I D [A] R DS(on) [mΩ]
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
300
10 V
4V
250
200
3.5 V
150
100
3V
50
0 2.5 V 02468
V DS [V]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
200
180
160
140
120
100
80
60
40
20
0 1
175 °C 25 °C -55 °C
23 V GS [V]
Rev. 1.0
IPB100N06S2L-05 IPP100N06S2L-05
6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS
16
3V
14
12
10
8
3.5 V
6
4V
4 4.5 V
10 V
2
0 10 0 20 40 60 80
I D [A]
8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs
300
100 120
250
200
150
100
50
0 40
page 5
50 100 150 I D [A]
200
2006-03-13
9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V
10
IPB100N06S2L-05 IPP100N06S2L-05
10 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
2.5
R DS(on) [mΩ] V GS(th) [V]
82
1350 µA
6 1.5
270 µA
41
2 0.5
0
-60 -20 20
60 100 14.