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IPB100N06S2L-05 Dataheets PDF



Part Number IPB100N06S2L-05
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPB100N06S2L-05 DatasheetIPB100N06S2L-05 Datasheet (PDF)

OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB100N06S2L-05 IPP100N06S2L-05 Product Summary V DS R DS(on),max (SMD version) ID 55 V 4.4 mΩ 100 A PG-TO263-3-2 PG-TO220-3-1 Type IPB100N06S2L-05 IPP100N06S2L-05 Package Ordering Code Marking PG-TO263-3-2 SP0002-19003 PN06L05 PG-TO220-3-1 SP0002.

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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB100N06S2L-05 IPP100N06S2L-05 Product Summary V DS R DS(on),max (SMD version) ID 55 V 4.4 mΩ 100 A PG-TO263-3-2 PG-TO220-3-1 Type IPB100N06S2L-05 IPP100N06S2L-05 Package Ordering Code Marking PG-TO263-3-2 SP0002-19003 PN06L05 PG-TO220-3-1 SP0002-18879 PN06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature T C=100 °C, V GS=10 V2) I D,pulse T C=25 °C E AS I D= 80 A V GS P tot T C=25 °C T j, T stg Value 100 100 400 810 ±20 300 -55 ... +175 Unit A mJ V W °C Rev. 1.0 page 1 2006-03-13 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5) IPB100N06S2L-05 IPP100N06S2L-05 min. Values typ. Unit max. - - 0.5 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA 55 1.2 Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance I DSS V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) I GSS V GS=20 V, V DS=0 V R DS(on) V GS=4.5 V, I D=80 A V GS=4.5 V, I D=80 A, SMD version - - 1.6 0.01 1 1 4.3 4.0 -V 2.0 1 µA 100 100 nA 5.9 mΩ 5.6 Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 3.5 4.7 mΩ V GS=10 V, I D=80 A, SMD version - 3.2 4.4 Rev. 1.0 page 2 2006-03-13 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol Conditions IPB100N06S2L-05 IPP100N06S2L-05 min. Values typ. Unit max. C iss C oss Crss t d(on) tr t d(off) tf V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=4.5 V, I D=100 A, R G=1.3 Ω - 5660 1330 360 18 25 98 24 - pF - ns - Q gs Q gd Qg V plateau V DD=44 V, I D=100 A, V GS=0 to 10 V - 19 25 nC 57 90 170 230 3.3 - V IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C t rr V R=30 V, I F=I S, di F/dt =100 A/µs - - 100 A - - 400 - 0.9 1.3 V - 65 80 ns Reverse recovery charge2) Q rr - 125 160 nC 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 185 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-13 1 Power dissipation P tot = f(T C); V GS ≥ 4 V 2 Drain current I D = f(T C); V GS ≥ 10 V IPB100N06S2L-05 IPP100N06S2L-05 350 120 P tot [W] I D [A] 300 100 250 80 200 60 150 40 100 50 20 00 0 50 100 150 200 0 50 100 150 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 100 1 µs 10 µs 100 µs 1 ms 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 0.5 10-1 0.1 0.05 200 I D [A] Z thJC [K/W] 10 10-2 0.01 1 0.1 Rev. 1.0 1 10 V DS [V] single pulse 10-3 100 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-03-13 I D [A] g fs [S] I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 300 10 V 4V 250 200 3.5 V 150 100 3V 50 0 2.5 V 02468 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 200 180 160 140 120 100 80 60 40 20 0 1 175 °C 25 °C -55 °C 23 V GS [V] Rev. 1.0 IPB100N06S2L-05 IPP100N06S2L-05 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS 16 3V 14 12 10 8 3.5 V 6 4V 4 4.5 V 10 V 2 0 10 0 20 40 60 80 I D [A] 8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs 300 100 120 250 200 150 100 50 0 40 page 5 50 100 150 I D [A] 200 2006-03-13 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V 10 IPB100N06S2L-05 IPP100N06S2L-05 10 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2.5 R DS(on) [mΩ] V GS(th) [V] 82 1350 µA 6 1.5 270 µA 41 2 0.5 0 -60 -20 20 60 100 14.


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