DatasheetsPDF.com

IPD250N06N3G

Infineon Technologies
Part Number IPD250N06N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology ...
Datasheet PDF File IPD250N06N3G PDF File

IPD250N06N3G
IPD250N06N3G

Overview
Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse3) E AS Gate source voltage V GS 1)J-STD20 and JESD22...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)