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TC58NYG2S3ETA00 Dataheets PDF



Part Number TC58NYG2S3ETA00
Manufacturers Toshiba
Logo Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet TC58NYG2S3ETA00 DatasheetTC58NYG2S3ETA00 Datasheet (PDF)

TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase ope.

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TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NYG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES • Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read • Mode control Serial input/output Command control • Number of valid blocks Min 4016 blocks Max 4096 blocks • Power supply VCC = 1.7V to 1.95V • Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=30pF) • Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 2.5 ms/block typ. • Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) 1 2010-07-13C PIN ASSIGNMENT (TOP VIEW) PINNAMES ×8 NC NC NC NC NC NC RY / BY RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TC58NYG2S3ETA00 I/O1 to I/O8 CE WE RE CLE ALE WP RY/BY VCC VSS I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Power supply Ground TC58NYG2S3ETA00 ×8 48 NC 47 NC 46 NC 45 NC 44 I/O8 43 I/O7 42 I/O6 41 I/O5 40 NC 39 NC 38 NC 37 VCC 36 VSS 35 NC 34 NC 33 NC 32 I/O4 31 I/O3 30 I/O2 29 I/O1 28 NC 27 NC 26 NC 25 NC 2 2010-07-13C BLOCK DIAGRAM I/O1 to I/O8 CE CLE ALE WE RE WP RY / BY I/O Control circuit Logic control RY / BY Status register Address register Command register Control circuit TC58NYG2S3ETA00 VCC VSS Column buffer Column decoder Data register Sense amp Memory cell array Row address buffer decoder Row address decoder HV generator ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VCC VIN VI/O PD TSOLDER TSTG TOPR Power Supply Voltage Input Voltage Input /Output Voltage Power Dissipation Soldering Temperature (10 s) Storage Temperature Operating Temperature VALUE −0.6 to 2.5 −0.6 to 2.5 −0.6 to VCC + 0.3 (≤ 2.5 V) 0.3 260 −55 to 150 0 to 70 CAPACITANCE *(Ta = 25°C, f = 1 MHz) SYMB0L PARAMETER CONDITION CIN Input VIN = 0 V COUT Output VOUT = 0 V * This parameter is periodically sampled and is not tested for every device. MIN   MAX 10 10 UNIT V V V W °C °C °C UNIT pF pF 3 2010-07-13C TC58NYG2S3ETA00 VALID BLOCKS SYMBOL PARAMETER MIN TYP. MAX UNIT NVB Number of Valid Blocks 4016  4096 Blocks NOTE: The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document. The first block (Block 0) is guaranteed to be a valid block at the time of shipment. The specification for the minimum number of valid blocks is applicable over lifetime The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane operations. RECOMMENDED DC OPERATING CONDITIONS SYMBOL PARAMETER MIN TYP. MAX UNIT VCC Power Supply Voltage 1.7  1.95 V VIH High Level input Voltage 1.7 V ≤ VCC ≤ 1.95 V Vcc x 0.8  VCC + 0.3 V VIL Low Level Input Voltage 1.7 V ≤ VCC ≤ 1.95 V * −2 V (pulse width lower than 20 ns) −0.3*  Vcc x 0.2 DC CHARACTERISTICS (Ta = 0 to 70 , VCC = 1.7 to 1.95V) SYMBOL PARAMETER IIL ILO ICCO1 ICCO2 ICCO3 ICCS Input Leakage Current Output Leakage Current Serial Read Current Programming Current Erasing Current Standby Current CONDITION VIN = 0 V to VCC VOUT = 0 V to VCC CE = VIL, IOUT = 0 mA, tcycle = 25 ns   CE = VCC − 0.2 V, WP = 0 V/VCC MIN       TYP.       MAX ±10 ±10 30 30 30 50 V UNIT µA µA mA mA mA µA VOH High Level Output Voltage IOH = −0.1 mA Vcc – 0.2   V VOL Low Level Output Voltage IOL = 0.1 mA IOL ( RY / BY ) Output current of RY / BY pin VOL = 0.2 V   0.2 V  4  mA 4 2010-07-13C TC58NYG2S3ETA00 AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70 , VCC = 1.7 to 1.95V) SYMBOL PARAMETER tCLS tCLH tCS tCH tWP tALS tALH tDS tDH tWC tWH tWW tRR tRW tRP tRC tREA tCEA tCLR tAR tRHOH tRL.


3DD13005C9D TC58NYG2S3ETA00 SPFMPR302


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