Document
TC58NYG2S3ETA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NYG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
Memory cell array Register Page size Block size
x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control Serial input/output
Command control
• Number of valid blocks Min 4016 blocks Max 4096 blocks
• Power supply VCC = 1.7V to 1.95V
• Access time
Cell array to register 30 µs max
Serial Read Cycle
25 ns min (CL=30pF)
• Program/Erase time Auto Page Program Auto Block Erase
300 µs/page typ. 2.5 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.)
Erase (avg.) Standby
30 mA max. 30 mA max
30 mA max 50 µA max
• Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
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PIN ASSIGNMENT (TOP VIEW)
PINNAMES
×8
NC NC NC NC NC NC RY / BY RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
TC58NYG2S3ETA00
I/O1 to I/O8 CE WE RE CLE ALE WP
RY/BY VCC VSS
I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Power supply Ground
TC58NYG2S3ETA00
×8
48 NC 47 NC 46 NC 45 NC 44 I/O8 43 I/O7 42 I/O6 41 I/O5 40 NC 39 NC 38 NC 37 VCC 36 VSS 35 NC 34 NC 33 NC 32 I/O4 31 I/O3 30 I/O2 29 I/O1 28 NC 27 NC 26 NC 25 NC
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BLOCK DIAGRAM
I/O1 to I/O8
CE CLE ALE WE RE WP
RY / BY
I/O Control circuit
Logic control
RY / BY
Status register Address register Command register
Control circuit
TC58NYG2S3ETA00
VCC VSS
Column buffer Column decoder
Data register Sense amp
Memory cell array
Row address buffer decoder
Row address decoder
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC VIN VI/O PD TSOLDER TSTG TOPR
Power Supply Voltage Input Voltage Input /Output Voltage Power Dissipation Soldering Temperature (10 s) Storage Temperature Operating Temperature
VALUE −0.6 to 2.5 −0.6 to 2.5 −0.6 to VCC + 0.3 (≤ 2.5 V)
0.3 260 −55 to 150 0 to 70
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN = 0 V
COUT
Output
VOUT = 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN
MAX 10 10
UNIT V V V W °C °C °C
UNIT pF pF
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TC58NYG2S3ETA00
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
4016
4096
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document. The first block (Block 0) is guaranteed to be a valid block at the time of shipment. The specification for the minimum number of valid blocks is applicable over lifetime The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane operations.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC Power Supply Voltage
1.7
1.95
V
VIH High Level input Voltage 1.7 V ≤ VCC ≤ 1.95 V
Vcc x 0.8
VCC + 0.3
V
VIL Low Level Input Voltage 1.7 V ≤ VCC ≤ 1.95 V * −2 V (pulse width lower than 20 ns)
−0.3*
Vcc x 0.2
DC CHARACTERISTICS (Ta = 0 to 70 , VCC = 1.7 to 1.95V)
SYMBOL
PARAMETER
IIL ILO ICCO1 ICCO2 ICCO3 ICCS
Input Leakage Current Output Leakage Current Serial Read Current Programming Current Erasing Current Standby Current
CONDITION
VIN = 0 V to VCC VOUT = 0 V to VCC CE = VIL, IOUT = 0 mA, tcycle = 25 ns
CE = VCC − 0.2 V, WP = 0 V/VCC
MIN
TYP.
MAX
±10 ±10 30 30 30 50
V
UNIT µA µA mA mA mA µA
VOH
High Level Output Voltage IOH = −0.1 mA
Vcc – 0.2
V
VOL Low Level Output Voltage IOL = 0.1 mA
IOL ( RY / BY )
Output current of RY / BY pin
VOL = 0.2 V
0.2 V 4 mA
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AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70 , VCC = 1.7 to 1.95V)
SYMBOL
PARAMETER
tCLS tCLH tCS tCH tWP tALS tALH tDS tDH tWC tWH tWW tRR tRW tRP tRC tREA
tCEA tCLR tAR tRHOH tRL.