SD1143

HG Semiconductors SD1143HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF Communications. It withstands very high VSWR under operating conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES 175 MHz 12.5 Volts Common Emitter POUT = 10 W Min. GP = 10 dB Gain APPLICATIONS/BENEFITS VHF Mobile Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value VCBO VCEO VCES VEBO IC PDISS TJ Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature 36 18 36 4.0 2.0 20 +200 TSTG Storage Temperature -65 to +150 Unit V V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 8.75 °C/W Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 HG Semiconductors SD1143HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Symbol BVCES BVCEO BVEBO ICBO hFE STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Test Conditions SD1143 Min. Typ. IC = 50 mA IC = 15 mA IE = 2.5 mA VCB =15 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA 36 18 4.0 5 Max. 1 200 Units V V V mA Symbol POUT GP COB DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Test Conditions SD1143 Min. Typ. f = 175 MHz f = 175 M...