Document
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR60045CT thru MBR600100CTR
VRRM = 45 V - 100 V IF(AV) = 600 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
45
32 45 -55 to 150 -55 to 150
60
42 60 -55 to 150 -55 to 150
80
57 80 -55 to 150 -55 to 150
100
70 100 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
IF(AV) IF,SM
Maximum forward voltage (per leg)
VF
Reverse current at rated DC blocking voltage (per leg)
IR
Thermal characteristics
Thermal resistance, junction-case, per leg
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IF = 300 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C
600
4000
0.75 1 10 50
0.28
600
4000
0.80 1 10 50
0.28
600
4000
0.84 1 10 50
0.28
600
4000
0.84 1 10 50
0.28
A A V mA
°C/W
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MBR60045CT thru MBR600100CTR
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MBR60045CT thru MBR600100CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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