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D2562

Inchange Semiconductor
Part Number D2562
Manufacturer Inchange Semiconductor
Description 2SD2562
Published May 16, 2015
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 DESCRIPTION ·Coll...
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D2562
D2562


Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.
) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.
5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649 APPLICATIONS ·Designed for series regulator and general purpose applications.
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iscsemi.
cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT wwwVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissi...



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