Document
http://www.fujielectric.com/products/semiconductor/
2MBI450VE-120-50
IGBT MODULE (V series) 1200V / 450A / 2 in one package
Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Collector-Emitter voltage
Symbols VCES
Conditions
Gate-Emitter voltage
VGES
Inverter
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Screw torque
Mounting (*2) Terminals (*3)
-
1ms 1ms 1 device
AC : 1min.
Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=100°C Tc=25°C
Inverter
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Symbols
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
Cies ton tr tr (i) toff tf
VF (terminal)
VF (chip)
trr
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V VCE = 20V, IC = 450mA
Tj=25°C
Tj=125°C
VGE = 15V IC = 450A
Tj=150°C Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V IC = 450A VGE = ±15V RG = 1Ω Tj = 150°C
LS = 30nH
Tj=25°C
Tj=125°C
VGE = 0V IF = 450A
Tj=150°C Tj=25°C
Tj=125°C
Tj=150°C
IF = 450A
Items
Symbols Conditions
Thermal resistance (1device) Contact thermal resistance (1device) (*4)
Rth(j-c) Rth(c-f)
IGBT FWD with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings 1200 ±20 450 520 900 450 900 3350 175 150 125
-40 ~ +125 2500 6.0 5.0
Units V V
W °C VAC Nm
Characteristics min. typ. max.
- - 2.0 - - 800 6.0 6.5 7.0 - 2.05 2.60 - 2.40 -
2.45 - 1.80 2.15 - 2.15 -
2.20 - 36 - 0.60 - 0.20 - 0.05 - 0.80 - 0.08 - 1.85 2.50 - 2.00 -
1.95 - 1.70 2.15 - 1.90 -
1.85 - 0.15 -
Units mA nA V
V
nF µs
V
µs
Characteristics min. typ. max.
- - 0.045
- - 0.077
- 0.0125 -
Units °C/W
1
2MBI450VE-120-50
Characteristics (Representative)
Collector current: Ic [A]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
1000 900 800
VGE=20V 15V
12V
700
600
500 10V
400
300
200 100 8V
0 012345
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
1000 900 800
Tj=25°C 125°C 150°C
700
600
500
400
300
200
100
0 01234 Collector-Emitter Voltage: VCE [V]
5
Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
Collector Current: Ic [A]
Gate Capacitance: Cies, Coes, Cres [nF] ***
Cies
10
Cres Coes 1 0 5 10 15 20 25 30 Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
1000 900
VGE= 20V 15V
800 12V 700
600
500 10V
400
300
200 8V
100
0 012345
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip
10
8
6
4
2 Ic=900A Ic=450A Ic=225A
0 5 10 15 20 25 Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C
Collector-Emitter Voltage: VCE [V]
Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div]
VCE
VGE
0 1000 2000 3000 4000 5000 Gate charge: Qg [nC]
2
2MBI450VE-120-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=125°C
10000
1000 100
toff ton tr
tf
10 0
200 400 600 800 Collector current: Ic [A]
1000
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C
10000
1000
toff
ton tr
100 tf
10 0.1
1 10 Gate resistance: RG [Ω]
100
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C
200 Tj=125oC Tj=150oC
150 Eon
100
50
0 0
Eoff
Err
1 10 Gate resistance: RG [Ω]
100 3
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=150°C
10000
1000 100
toff ton tr
tf
10 0
200 400 600 800 Collector current: Ic [A]
1000
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=125°C,150°C
100.