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2MBI450VE-120-50 Dataheets PDF



Part Number 2MBI450VE-120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI450VE-120-50 Datasheet2MBI450VE-120-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 2MBI450VE-120-50 IGBT MODULE (V series) 1200V / 450A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Symbols VCES .

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http://www.fujielectric.com/products/semiconductor/ 2MBI450VE-120-50 IGBT MODULE (V series) 1200V / 450A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Symbols VCES Conditions Gate-Emitter voltage VGES Inverter Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - 1ms 1ms 1 device AC : 1min. Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-5.0 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Tc=100°C Tc=25°C Inverter Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 450mA Tj=25°C Tj=125°C VGE = 15V IC = 450A Tj=150°C Tj=25°C Tj=125°C Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 450A VGE = ±15V RG = 1Ω Tj = 150°C LS = 30nH Tj=25°C Tj=125°C VGE = 0V IF = 450A Tj=150°C Tj=25°C Tj=125°C Tj=150°C IF = 450A Items Symbols Conditions Thermal resistance (1device) Contact thermal resistance (1device) (*4) Rth(j-c) Rth(c-f) IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. IGBT Modules Maximum ratings 1200 ±20 450 520 900 450 900 3350 175 150 125 -40 ~ +125 2500 6.0 5.0 Units V V W °C VAC Nm Characteristics min. typ. max. - - 2.0 - - 800 6.0 6.5 7.0 - 2.05 2.60 - 2.40 - 2.45 - 1.80 2.15 - 2.15 - 2.20 - 36 - 0.60 - 0.20 - 0.05 - 0.80 - 0.08 - 1.85 2.50 - 2.00 - 1.95 - 1.70 2.15 - 1.90 - 1.85 - 0.15 - Units mA nA V V nF µs V µs Characteristics min. typ. max. - - 0.045 - - 0.077 - 0.0125 - Units °C/W 1 2MBI450VE-120-50 Characteristics (Representative) Collector current: Ic [A] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1000 900 800 VGE=20V 15V 12V 700 600 500 10V 400 300 200 100 8V 0 012345 Collector-Emitter voltage: VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 1000 900 800 Tj=25°C 125°C 150°C 700 600 500 400 300 200 100 0 01234 Collector-Emitter Voltage: VCE [V] 5 Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C 100 Collector Current: Ic [A] Gate Capacitance: Cies, Coes, Cres [nF] *** Cies 10 Cres Coes 1 0 5 10 15 20 25 30 Collector-Emitter voltage: VCE [V] Collector current: Ic [A] IGBT Modules http://www.fujielectric.com/products/semiconductor/ Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1000 900 VGE= 20V 15V 800 12V 700 600 500 10V 400 300 200 8V 100 0 012345 Collector-Emitter voltage: VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip 10 8 6 4 2 Ic=900A Ic=450A Ic=225A 0 5 10 15 20 25 Gate-Emitter Voltage: VGE [V] Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C Collector-Emitter Voltage: VCE [V] Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] VCE VGE 0 1000 2000 3000 4000 5000 Gate charge: Qg [nC] 2 2MBI450VE-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=125°C 10000 1000 100 toff ton tr tf 10 0 200 400 600 800 Collector current: Ic [A] 1000 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C 10000 1000 toff ton tr 100 tf 10 0.1 1 10 Gate resistance: RG [Ω] 100 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C 200 Tj=125oC Tj=150oC 150 Eon 100 50 0 0 Eoff Err 1 10 Gate resistance: RG [Ω] 100 3 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=150°C 10000 1000 100 toff ton tr tf 10 0 200 400 600 800 Collector current: Ic [A] 1000 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=125°C,150°C 100.


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