Document
http://www.fujielectric.com/products/semiconductor/
2MBI200VB-120-50
IGBT MODULE (V series) 1200V / 200A / 2 in one package
Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
IC
Collector current
IC pulse -IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Screw torque
Mounting (*2) Terminals (*3)
-
Conditions
Continuous 1ms 1ms 1 device
AC : 1min.
Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 2.5-3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
TC=100°C
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Symbols
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
RG (int) Cies ton tr tr (i) toff tf
VF (terminal)
VF (chip)
trr
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 200mA
VGE = 15V IC = 200A
Tj=25°C Tj=125°C Tj=150°C
VGE = 15V IC = 200A
Tj=25°C Tj=125°C Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V IC = 200A VGE = ±15V RG = 2.7Ω Tj = 150°C
VGE = 0V IF = 200A
Tj=25°C Tj=125°C Tj=150°C
VGE = 0V IF = 200A
Tj=25°C Tj=125°C Tj=150°C
IF = 200A
Items
Symbols Conditions
Thermal resistance (1device) Contact thermal resistance (1device) (*4)
Rth(j-c) Rth(c-f)
IGBT FWD with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings 1200 ±20 200 400 200 400 1500 175 150 125
-40 ~ 125 2500 3.5 3.5
Units V V
W °C VAC Nm
Characteristics min. typ. max.
- - 2.0 - - 400 6.0 6.5 7.0 - 1.95 2.40 - 2.25 -
2.30 - 1.75 2.20 - 2.05 -
2.1 - 3.8 - 18.2 - 600 - 200 - 50 - 800 - 80 - 1.85 2.30 - 2.00 -
1.95 - 1.70 2.15 - 1.85 -
1.80 - 150 -
Units mA nA V
V
Ω nF
nsec
V
nsec
Characteristics min. typ. max.
- - 0.100
- - 0.160
- 0.025 -
Units °C/W
1
2MBI200VB-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
500
400 VGE=20V 15V 12V
Collector current: IC [A]
300 10V
200
100
0 0
8V
1234 Collector-Emitter voltage: VCE [V]
5
Collector Current: IC [A]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
500
400 Tj=25°C 125°C 150°C
300
200
100
0 0123 Collector-Emitter Voltage: VCE [V]
4
Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
Cies 10
Cres
1 Coes
Gate Capacitance: Cies, Coes, resC [nF] ***
0.1 0
10 20 Collector-Emitter voltage: VCE [V]
30
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Collector current: IC [A]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
500
400 VGE= 20V 15V 12V
300
200 10V
100
0 0
8V
1234 Collector-Emitter voltage: VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip
10
Collector-Emitter Voltage: CEV [V]
8
6
4
2
IC=400A IC=200A
IC=100A
0 5 10 15 20
Gate-Emitter Voltage: VGE [V]
25
Gate-Emitter voltage: GEV [V]
Dynamic Gate Charge (typ.) VCC=600V, IC=200A, Tj= 25°C 20
15 VCE
10
5
0 -5 VGE
-10
-15
-20 -2 -1 0 1 Gate charge: Qg [ μC]
2
800 600 400 200 0 -200 -400 -600 -800 2
Collector-Emitter voltage: CEV [V]
2MBI200VB-120-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C
10000
Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C
10000
Switching time: ton, tr, toff, tf [nsec]
1000 100
toff ton
tr
tf
10 0
100 200 300 400 Collector current: IC [A]
500
1000 100
toff ton tr
tf
10 0
100 200 300 400 Collector current: IC [A]
500
Switching time vs. Gate resistance (typ.) VCC=600V, IC=200A, VGE=±15V, Tj=125°C
10000
1000
toff ton tr
100 tf
10 1
10 Gate resistance: RG [Ω]
100
Switching loss vs. Gate resistance (typ.) VCC=600V, IC=200A, VGE=±15V, Tj=125, 150°C
70
60
Tj=125°C Tj=150°C
Eon
50
40 30 Eoff
20
10
0 1
Err
10 Gate resistance: RG [Ω]
100
3
Collector current: IC [A]
Switching loss: Eon, Eoff, rrE [mJ/pulse]
Switching loss vs. Collector current (typ.) VCC=600, VGE=±15V, RG=2.7Ω, Tj=125, 15.