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2MBI200VB-120-50 Dataheets PDF



Part Number 2MBI200VB-120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI200VB-120-50 Datasheet2MBI200VB-120-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 2MBI200VB-120-50 IGBT MODULE (V series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Collector-Emitter voltage VCES .

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http://www.fujielectric.com/products/semiconductor/ 2MBI200VB-120-50 IGBT MODULE (V series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES IC Collector current IC pulse -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - Conditions Continuous 1ms 1ms 1 device AC : 1min. Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 2.5-3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Electrical characteristics (at Tj= 25°C unless otherwise specified) TC=100°C Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) RG (int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA VGE = 15V IC = 200A Tj=25°C Tj=125°C Tj=150°C VGE = 15V IC = 200A Tj=25°C Tj=125°C Tj=150°C - VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 200A VGE = ±15V RG = 2.7Ω Tj = 150°C VGE = 0V IF = 200A Tj=25°C Tj=125°C Tj=150°C VGE = 0V IF = 200A Tj=25°C Tj=125°C Tj=150°C IF = 200A Items Symbols Conditions Thermal resistance (1device) Contact thermal resistance (1device) (*4) Rth(j-c) Rth(c-f) IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. IGBT Modules Maximum ratings 1200 ±20 200 400 200 400 1500 175 150 125 -40 ~ 125 2500 3.5 3.5 Units V V W °C VAC Nm Characteristics min. typ. max. - - 2.0 - - 400 6.0 6.5 7.0 - 1.95 2.40 - 2.25 - 2.30 - 1.75 2.20 - 2.05 - 2.1 - 3.8 - 18.2 - 600 - 200 - 50 - 800 - 80 - 1.85 2.30 - 2.00 - 1.95 - 1.70 2.15 - 1.85 - 1.80 - 150 - Units mA nA V V Ω nF nsec V nsec Characteristics min. typ. max. - - 0.100 - - 0.160 - 0.025 - Units °C/W 1 2MBI200VB-120-50 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 400 VGE=20V 15V 12V Collector current: IC [A] 300 10V 200 100 0 0 8V 1234 Collector-Emitter voltage: VCE [V] 5 Collector Current: IC [A] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 500 400 Tj=25°C 125°C 150°C 300 200 100 0 0123 Collector-Emitter Voltage: VCE [V] 4 Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C 100 Cies 10 Cres 1 Coes Gate Capacitance: Cies, Coes, resC [nF] *** 0.1 0 10 20 Collector-Emitter voltage: VCE [V] 30 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Collector current: IC [A] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 500 400 VGE= 20V 15V 12V 300 200 10V 100 0 0 8V 1234 Collector-Emitter voltage: VCE [V] 5 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip 10 Collector-Emitter Voltage: CEV [V] 8 6 4 2 IC=400A IC=200A IC=100A 0 5 10 15 20 Gate-Emitter Voltage: VGE [V] 25 Gate-Emitter voltage: GEV [V] Dynamic Gate Charge (typ.) VCC=600V, IC=200A, Tj= 25°C 20 15 VCE 10 5 0 -5 VGE -10 -15 -20 -2 -1 0 1 Gate charge: Qg [ μC] 2 800 600 400 200 0 -200 -400 -600 -800 2 Collector-Emitter voltage: CEV [V] 2MBI200VB-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C 10000 Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C 10000 Switching time: ton, tr, toff, tf [nsec] 1000 100 toff ton tr tf 10 0 100 200 300 400 Collector current: IC [A] 500 1000 100 toff ton tr tf 10 0 100 200 300 400 Collector current: IC [A] 500 Switching time vs. Gate resistance (typ.) VCC=600V, IC=200A, VGE=±15V, Tj=125°C 10000 1000 toff ton tr 100 tf 10 1 10 Gate resistance: RG [Ω] 100 Switching loss vs. Gate resistance (typ.) VCC=600V, IC=200A, VGE=±15V, Tj=125, 150°C 70 60 Tj=125°C Tj=150°C Eon 50 40 30 Eoff 20 10 0 1 Err 10 Gate resistance: RG [Ω] 100 3 Collector current: IC [A] Switching loss: Eon, Eoff, rrE [mJ/pulse] Switching loss vs. Collector current (typ.) VCC=600, VGE=±15V, RG=2.7Ω, Tj=125, 15.


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