MDD7N25

MDD7N25 N-channel MOSFET 250V MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω General Description The MDDN25 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 250V  ID = 6.2A  RDS(ON) ≤ 0.55Ω Applications  Power Supply  PFC  LED TV @VGS = 10V D Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Nov. 2011 Version 1.0 1 Symbol VDSS VGSS ID IDM PD dv/dt EAR IAR EAS TJ, Tstg Symbol RθJA RθJC Rating 250 ±30 6.2 3.9 25 56 0.02 4.5 0.4 5.6 115 -55~150 Unit V V A A A W W/ oC V/ns mJ A mJ oC Rating 110 2.2 Unit oC/W MagnaChip Semiconductor Ltd. MDD7N25 N-channel MOSFET 250V Ordering Information Part Number MDD7N25RH Temp. Range -55~150oC Package D-pak Packing Reel and Tape RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Le...