K3559

Silicon MOSFET 2SK3559 N-channel enhancement mode MOSFET High speed switching Absolute Maximum Ratings Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Allowable power Tc = 25 °C *1 dissipation Ta = 25 °C *2 Junction temperature Storage temperature Symbol VDSS VGSS ID IDP PD PD Tj Tstg Rating 230 30 30 120 100 3 150 -55 to +150 *1 : Tc = 25 °C *2 : Ta = 25 °C (Without heat sink ) Unit V V A A W W °C °C 16.2±0.5 (3.2) (2.3) Solder Dip 21.0±0.5 15.0±0.2 (0.7) 15.0±0.3 11.0±0.2 Unit : mm 5.0±0.2 (3.2) φ 3.2±0.1 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 5.45±0.3 10.9±0.5 123 TOP-3F-B1 Electrical Characteristics (Tc = 25 ± 3 °C) Parameter Symbol Condition Min Typ Max Unit Drain Cutoff Current IDSS VDS = 184V, VGS = 0 − − 100 µ A Gate-source Leakage Current IGSS VGS = ± 30 V, VDS = 0 − − ±1 µA Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 230 − − V Gate Threshold Voltage Vth VDS = 25 V, ID = 1 mA 2 − 4V Drain-source on Resistance RDS (on) VGS = 10 V, ID = 15 A − 55 74 m Ω Forward Transfer Admittance Yfs VDS = 25 V, ID = 15 A 8 16 − S Diode Forward Voltage VDSF IDR = 30 A, VGS = 0 − − -1.5 V Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss VDS = 25 V, VGS = 0, Crss f = 1MHz − 3170 − − 440 − − 35 − pF pF pF Turn-on delay time Rise time td (on) − 36 − n s tr VDD = 100V, ID = 15 A − 25 − ns Turn-off delay time td (off) RL = 6.7 Ω, VGS = 10 V − 217 − ns F...