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NGTB30N60IHLWG

ON Semiconductor

IGBT


Description
NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the...



ON Semiconductor

NGTB30N60IHLWG

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