NGTB30N60FWG

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Power Factor Correction ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C Diode Pulsed Current Tpulse Limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) Power Dissipation @ TC = 25°C @ TC = 100°C ICM 120 A IF A 60 30 IFM 120 A tSC 5 ms VGE $20 V $30 PD W 167 67 Operating junction temperature range TJ −55 to +150 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +150 260 °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliabil...