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STX616-AP Dataheets PDF



Part Number STX616-AP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description High voltage NPN power transistor
Datasheet STX616-AP DatasheetSTX616-AP Datasheet (PDF)

STX616 High voltage NPN power transistor Features ■ High voltage capability ■ High DC current gain ■ Minimum lot-to-lot spread for reliable operation Applications ■ Switching mode power supply ■ Battery charger Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device .

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STX616 High voltage NPN power transistor Features ■ High voltage capability ■ High DC current gain ■ Minimum lot-to-lot spread for reliable operation Applications ■ Switching mode power supply ■ Battery charger Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STX616 X616 STX616-AP X616 October 2007 Package TO-92 TO-92AP Rev 2 Packaging Bulk Ammopack 1/8 www.st.com 8 Electrical characteristics 1 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 2. Absolute maximum rating Symbol Parameter VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient __max __max STX616 STX616-AP Value 980 500 12 1.5 2.4 0.8 1.2 2.8 -65 to 150 150 Unit V V V A A A A W °C °C Value 44.6 150 Unit °C/W °C/W 2/8 STX616 STX616-AP 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE =0) VCE(sus) (1) Collector-emitter sustaining voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) VCE(sat) (1) Collector-emitter saturation voltage VBE(sat) (1) Base-emitter saturation voltage hFE (1) DC current gain VCE = 980V VCE = 980V IC = 10mA IE = 1mA IC = 0.2A IC = 1A IC = 0.2A IC = 1A IC = 500µA IC = 200mA IC = 500mA IC = 1.5A Tc = 125°C 500 12 IB = 40mA IB = 200mA IB = 40mA IB = 200mA VCE = 2V VCE = 5V VCE = 5V VCE = 5V 17 25 12 4 50 µA 0.5 mA V V 0.5 V 1V 1V 1.4 V RESISTIVE LOAD ton Turn-on time ts Storage time tf Fall time VCC = 250V IC = 250mA IB1 = 65mA IB2 = -130mA 0.2 5 0.65 µs µs µs RESISTIVE LOAD ton Turn-on time ts Storage time tf Fall time INDUCTIVE LOAD ts Storage time tf Fall time INDUCTIVE LOAD ts Storage time tf Fall time VCC = 250V IC = 0.8A IB1 = 160mA IB2 = -0.4A Vcl = 300V IB1 = 65mA L = 200µH IC = 250mA IB2 = -130mA Vcl = 300V IB1 = 160mA L = 200µH IC = 0.8A IB2 = -0.4A 1 2.5 0.35 µs µs µs 5 µs 0.5 µs 2.5 0.25 µs µs Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 3/8 Package mechanical data 3 Package mechanical data STX616 STX616-AP In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the i.


STX616 STX616-AP G1427F31U


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