Document
STX616
High voltage NPN power transistor
Features
■ High voltage capability ■ High DC current gain ■ Minimum lot-to-lot spread for reliable operation
Applications
■ Switching mode power supply ■ Battery charger
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger.
TO-92
TO-92AP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STX616
X616
STX616-AP
X616
October 2007
Package TO-92
TO-92AP
Rev 2
Packaging Bulk
Ammopack
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Electrical characteristics
1 Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 2. Absolute maximum rating
Symbol
Parameter
VCES VCEO VEBO
IC ICM IB IBM Ptot Tstg TJ
Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient
__max __max
STX616 STX616-AP
Value 980 500 12 1.5 2.4 0.8 1.2 2.8 -65 to 150 150
Unit V V V A A A A W °C °C
Value
44.6 150
Unit
°C/W °C/W
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STX616 STX616-AP
2 Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current (VBE =0)
VCE(sus) (1)
Collector-emitter sustaining voltage
(IB = 0)
VEBO
Emitter-base voltage (IC = 0)
VCE(sat) (1) Collector-emitter saturation voltage
VBE(sat) (1)
Base-emitter saturation voltage
hFE (1) DC current gain
VCE = 980V VCE = 980V
IC = 10mA
IE = 1mA
IC = 0.2A IC = 1A IC = 0.2A IC = 1A IC = 500µA IC = 200mA IC = 500mA IC = 1.5A
Tc = 125°C 500
12
IB = 40mA IB = 200mA
IB = 40mA IB = 200mA
VCE = 2V VCE = 5V VCE = 5V VCE = 5V
17 25 12 4
50 µA 0.5 mA
V
V 0.5 V 1V 1V 1.4 V
RESISTIVE LOAD ton Turn-on time
ts Storage time tf Fall time
VCC = 250V IC = 250mA IB1 = 65mA IB2 = -130mA
0.2 5 0.65
µs µs µs
RESISTIVE LOAD ton Turn-on time ts Storage time tf Fall time
INDUCTIVE LOAD ts Storage time tf Fall time
INDUCTIVE LOAD ts Storage time tf Fall time
VCC = 250V IC = 0.8A IB1 = 160mA IB2 = -0.4A
Vcl = 300V IB1 = 65mA L = 200µH
IC = 250mA IB2 = -130mA
Vcl = 300V IB1 = 160mA L = 200µH
IC = 0.8A IB2 = -0.4A
1 2.5 0.35
µs µs µs
5 µs 0.5 µs
2.5 0.25
µs µs
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
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Package mechanical data
3 Package mechanical data
STX616 STX616-AP
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the i.