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STN4826

Stanson

Dual N-Channel Enhancement Mode MOSFET


Description
STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic...



Stanson

STN4826

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