C6099

www.DataSheet4U.com Ordering number : ENA0435 2SC6099 SANYO Semiconductors DATA SHEET 2SC6099 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=80V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA Ratings 120 120 100 6.5 2 3 400 0.8 15 150 --55 to +150 Unit V V V V A A mA W W °C °C min 300 Ratings typ max Unit 1 µA 1 µA 600 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or materi...