JCS5N50RT

N R N-CHANNEL MOSFET JCS5N50VT/RT/CT/FT MAIN CHARACTERISTICS Package ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1.6Ω Qg 15 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 16pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 16pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS5N50VT-O-V-N-B JCS5N50RT-O-R-N-B JCS5N50CT-O-C-N-B JCS5N50FT-O-F-N-B JCS5N50VT JCS5N50RT JCS5N50CT JCS5N50FT Package IPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO Packaging Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) ：200911A 1/12 R JCS5N50VT/RT/CT/FT ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Symbol JCS5N50VT/RT Value JCS5N50CT VDSS 500 Drain Current -continuous （ 1） ID T=25℃ T=100℃ 5 3.16 Drain Current - pulse （note 1） Gate-Source Voltage （ 2） IDM VGSS 20 ±30 Single Pulsed Avalanche Energy（note 2） （ 1） Avalanche Current（note 1） （ 1） EAS IAR 305 5 Repetitive Avalanche Current （note 1） EAR 10.1 （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt 4.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 91 0.73 101 0.81 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes * TL 300 *Drain current limited by maximum junction temperature JCS5N50FT 500 5* 3.16*...