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A817

Toshiba

2SA817

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 2SA817 Audio Frequency Amplifier Applications Unit...


Toshiba

A817

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Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 2SA817 Audio Frequency Amplifier Applications Unit: mm · Complementary to 2SC1627. · Suitable for driver of 20~25 watts audio amplifiers. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -80 -80 -5 -300 -60 600 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -50 V, IE = 0 IEBO VEB = -5 V, IC = 0 V (BR) CEO IC = -5 mA, IB = 0 hFE (1) VCE = -2 V, IC = -50 mA (Note) hFE (2) VCE = -2 V, IC = -200 mA VCE (sat) IC = -200 mA, IB = -20 mA VBE VCE = -2 V, IC = -5 mA fT VCE = -10 V, IC = -10 mA Cob VCB = -10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ -0.1 mA ¾ ¾ -0.1 mA -80 ¾ ¾ V 70 ¾ 240 40 ¾ ¾ ¾ ¾ -0.4 V -0.55 ¾ -0.8 V 70 100 ¾ MHz ¾ 14 ¾ pF 1 2003-03-24 2SA817 2 2003-03-24 2SA817 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve ...




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