Ordering number : ENN6987A
2SA2062 / 2SC5774
2SA2062 / 2SC5774
Features
• Large current capacitance. • Wide ASO and hi...
Ordering number : ENN6987A
2SA2062 / 2SC5774
2SA2062 / 2SC5774
Features
Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process.
PNP Epitaxial Planar Silicon
Transistor NPN Triple Diffused Planar Silicon
Transistor
140V / 10A, AF70W Output Applications
Specifications Note*( ) : 2SA2062
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time
Symbol
Conditions
ICBO IEBO hFE(1) hFE(2)
fT Cob
VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
ton tstg
tf
VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)5A IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0 IC=(--)50mA, RBE=∞ IE=(--)5mA, IC=0 See specified test circuit.
See specified test circuit.
See specified test circuit.
Ratings (-)160 (-)140 (-)6 (-)10 (-)20 2.5 110 150
-55 to +150
Unit V V V A A W W °C °C
...