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CES520

Part Number	CES520
Manufacturer	Toshiba
Description	Schottky Barrier Diode
Published	May 4, 2015
Detailed Description	Schottky Barrier Diode Silicon Epitaxial CES520 1. Applications • High-Speed Switching 2. Features (1) Low reverse curre...
Datasheet	CES520 PDF File

Overview

Schottky Barrier Diode Silicon Epitaxial CES520 1.
Applications • High-Speed Switching 2.
Features (1) Low reverse current: IR(2) = 5 µA (max) (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages.
3.
Packaging and Internal Circuit CES520 1: Cathode 2: Anode ESC 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage Peak forward current Average rectified current Non-repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Operating temperature VR IFM IO IFSM PD Tj Tstg Topr    (Note 1) (Note 2)    30 300 200 1 150 125 -55 to 125 -40 to 100...

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