STF19NM50N

STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data 3 2 1 TO-220FP TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Features Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications '7$%* 6 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Order codes STF19NM50N STP19NM50N STW19NM50N Table 1. Device summary Marking Packages TO-220FP 19NM50N TO-220 TO-247 Packaging Tube September 2013 This is information on a product in full production. DocID17079 Rev 2 1/18 www.st.com Contents Contents STF19NM50N, STP19NM50N, STW19NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . ...