C4521

Ordering number:EN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Package Dimensions unit:mm 2038A [2SC4521] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Ratings 60 45 5 3 6 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=45V, IE=0 VEB=2V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=3A VCE=2V, IC=500mA VCB=10V, f=1MHz * : The 2SC4521 is classified by 500mA hFE as follows : 100 R 200 140 S 280 200 T 400 Marking : CL hFE rank : R, S, T Ratings min typ 100* 40 300 25 max 1 10 400* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabil...