SGM0410

Elektronische Bauelemente SGM0410 3.5A, 100V, RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SGM0410 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SGM0410 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 0410 = Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1@ VGS=10V Pulsed Drain Current 3 TA=25°C TA=70°C ID IDM Power Dissipation TA=25°C PD Operating Junction and Storage Temperature TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 RθJA Maximum Thermal Resistance from Junction to Ambient 2 Maximum Thermal Resistance from Junction to Case 1 RθJA RθJC SOT-89 123 A EC 4 BD FG H J K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.25 2.60 1.55 TYP. 0.89 1.20 REF. G H J K L D 24 Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 1 G 3 S Rating 100 ±20 3.5 2.8 10 1.5 -65~150 t≦10s , 50 Steady State , 85 135 36...