Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
MCR 100- 6, - 8 Silicon Planar PNPN Thyristor
TO-92...
Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated
Transistors
MCR 100- 6, - 8 Silicon Planar P
NPN Thyristor
TO-92
1. KATHODE
FEATURES
2. GATE
Current-IGT: ITRMS: VDRM:
200 0.8 MCR100-6: MCR100-8:
µA A 400 V 600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
3. ANODE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Symbol
Test conditions
MIN MAX
On state voltage *
VTM ITM=1A
1.7
Gate trigger voltage
Peak Repetitive forward and reverse blocking voltage
MCR100-6 MCR100-8 Peak forward or reverse blocking Current
Holding current
VGT
VDRM
AND
VRRM
IDRM IRRM
IH
VAK=7V
0.8
IDRM= 10 µA ,VMAX=1010 V
VAK= Rated VDRM or VRRM IHL= 20 mA , Av = 7 V
400 600
10 5
A2 5 15
Gate trigger current
A1
IGT A
VAK=7V
15 30 30 80
UNIT V V
V
µA mA µA µA µA
B 80 200 µA
* Forward current applied for 1 ms maximum duration, duty cycle≤1%.
Typical Characteristics
MCR100-6,-8
...
