MJE13005G

MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features VCEO(sus) 400 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A, 100_C is 180 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Emitter Current − Continuous − Peak (Note 1) Total Device Dissipation @ TA = 25_C Derate above 25°C Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD Value 400 700 9 4 8 2 4 6 12 2 0.016 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 75 0.6 −65 to +150 W W/_C _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Thermal Resistance, Junction−to−Case RqJC 1.67 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 275 _C Stresses exceeding Ma...