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FDB104

Galaxy Semi-Conductor

SILICON BRIDGE RECTIFIERS

BL GALAXY ELECTRICAL SILICON BRIDGE RECTIFIERS FDB101 --- FDB107 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A FEATURES ...


Galaxy Semi-Conductor

FDB104

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BL GALAXY ELECTRICAL SILICON BRIDGE RECTIFIERS FDB101 --- FDB107 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A FEATURES Rating to 1000V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, solderde plated Plastic material has UL flammability classification 94V-O Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams DB - 1 .255(6.5) .245(6.2) .310(7.9) .290(7.4) .365(9.3) .355(9.0) .060(1.5) .020(.51) .016(.41) .205(5.2) .195(5.0) .135(3.4) .155(2.9) .165(4.2) .155(3.9) .350(8.9) .300(7.6) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard Output current @TA=25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Maximum reverse recovery time (Note1) Operating junction temperature range Storage temperature range NOTE:1. Measured with IF=0.5A,IR=1A, Irr=0.25A. FDB 101 VRRM VRMS VDC 50 35 50 IF(AV) FDB 102 100 70 100 FDB 103 200 140 200 FD...




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