Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features 1) High breakdown voltage, BVCEO=80V, and
high curren...
Medium power
transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features 1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−80
Collector-emitter voltage
VCEO
−80
Emitter-base voltage
VEBO
−5
Collector current
IC −0.7
Collector power dissipation
2SB1189 2SB1238
PC
0.5 2 1
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Unit V V V A
W ∗1
∗2
°C °C
Packaging specifications and hFE
Type Package
hFE Marking
Code Basic ordering unit (pieces)
∗Denotes hFE
2SB1189
MPT3
QR
BD∗
T100
1000
2SB1238 ATV QR − TV2 2500
Dimensions (Unit : mm)
2SB1189
4.0 1.0 2.5 0.5
(1) (2) (3)
3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6
4.5
ROHM : MPT3 EIAJ : SC-62
2SB1238
6.8
(1) Base (2) Collector (3) Emitter
2.5
1.0 0.9 14.5 4.4
0.65Max.
0.5 (1) (2) (3)
2.54 2.54
1.05 0.45 Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob
Min. Typ...