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MTP8N50E

Motorola
Part Number MTP8N50E
Manufacturer Motorola
Description Power Field Effect Transistor
Published Apr 22, 2015
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhan...
Datasheet PDF File MTP8N50E PDF File

MTP8N50E
MTP8N50E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet TMOS E-FET.
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed a...


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