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LDTA114TM3T5G Dataheets PDF



Part Number LDTA114TM3T5G
Manufacturers LRC
Logo LRC
Description Bias Resistor Transistors
Datasheet LDTA114TM3T5G DatasheetLDTA114TM3T5G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a si.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. ƽSimplifies Circuit Design ƽReduces Board Space ƽReduces Component Count ƽThe SOT-723 Package can be Soldered using Wave or Reflow. ƽAvailable in 4 mm, 8000 Unit Tape & Reel ƽThese are Pb-Free Devices. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Collector Current IC THERMAL CHARACTERISTICS 50 50 100 Characteristic Symbol Max Total Device Dissipation TA = 25°C Derate above 25°C PD 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) Thermal Resistance – Junction-to-Ambient RθJA 480 (Note 1) 205 (Note 2) Junction and Storage Temperature Range TJ, Tstg –55 to +150 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Unit Vdc Vdc mAdc Unit mW mW/°C °C/W °C LDTA114EM3T5G Series 3 1 SOT-723 2 PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MARKING DIAGRAM 3 XX M 12 xx = Specific Device Code M = Date Code Version 1.0 LDTA114EM3T5G_S-1/11 LESHAN RADIO COMPANY, LTD. ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G 6A 10 6B 22 6C 47 6D 10 6E 10 6F 4.7 6H 2.2 6J 4.7 6K 4.7 6L 22 6M 2.2 6N 100 6P 47 10 22 47 47 ∞ ∞ 2.2 4.7 47 47 47 100 22 LDTA114EM3T5G_Series Package Shipping SOT−723 (Pb−Free) 8000/Tape & Reel Version 1.0 LDTA114EM3T5G_S-2/11 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol LDTA114EM3T5G_Series Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G ICBO ICEO IEBO − − − − − − − − − − − − − − − − 100 nAdc − 500 nAdc − 0.5 mAdc − 0.2 − 0.1 − 0.2 − 0.9 − 1.9 − 2.3 − 1.5 − 0.18 − 0.13 − 0.2 − 0.05 − 0.13 Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3.) V(BR)CBO V(BR)CEO 50 50 − − − Vdc − Vdc DC Current Gain (VCE = 10 V, IC = 5.0 mA) LDTA114EM3T5G hFE 35 60 LDTA124EM3T5G 60 100 LDTA144EM3T5G 80 140 LDTA114YM3T5G 80 140 LDTA114TM3T5G 160 250 LDTA143TM3T5G 160 250 LDTA123EM3T5G 8.0 15 LDTA143EM3T5G 15 27 LDTA143ZM3T5G 80 140 LDTA124XM3T5G 80 130 LDTA123JM3T5G 80 140 LDTA115EM3T5G 80 150 LDTA144WM3T5G 80 140 − − − − − − − − − − − − − Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) LDTA123EM3T5G (IC = 10 mA, IB = 1 mA) LDTA114TM3T5G/LDTA143TM3T5G/ LDTA143ZM3T5G/LDTA124XM3T5G/LDTA143EM3T5G VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) LDTA114EM3T5G LDTA124EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA144EM3T5G LDTA115EM3T5G LDTA144WM3T5G VOL − − − − − − − − − − − − − Vdc − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G VOH 4.9 − − Vdc 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Version 1.0 LDTA114EM3T5G_S-3/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Input Resistor LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G R1 7.0 10 13 kW 15.4 22 28.6 32.9 47 61.1 7.0 10 13 7.0 10 13 3.3 4.7 6.1 1.5 2.2 2.9 3.3 4.7 6.1 3.3 4.7 6.1 15.4 22 28.6 1.54 2.2 2.86 70 100 130 32.9 47 61.1 Resistor Ratio / LDTA114EM3T5G/LDTA124EM3T5G/LDTA144EM3.


LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G


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