BC847B ® BC847C
Type BC847B BC847C
SMALL SIGNAL NPN TRANSISTORS
PRELIMINARY DATA
Marking 1F 1G
s SILICON EPITAXIAL PL...
BC847B ® BC847C
Type BC847B BC847C
SMALL SIGNAL
NPN TRANSISTORS
PRELIMINARY DATA
Marking 1F 1G
s SILICON EPITAXIAL PLANAR
NPN TRANSISTORS
s MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS
s TAPE AND REEL PACKING s BC847B - THE
PNP COMPLEMENTARY
TYPE IS BC857B
APPLICATIONS s WELL SUITABLE FOR PORTABLE
EQUIPMENT s SMALL LOAD SWITCH
TRANSISTORS
WITH HIGH GAIN AND LOW SATURATION VOLTAGE
SOT-23 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current Ptot Total Dissipation at TC = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
June 2002
Value 50 45 6 100 200 250
-65 to 150 150
Unit V V V mA mA
mW oC oC
1/4
BC847B / BC847C
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient Device mounted on a PCB area of 1 cm2.
Max
500 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off Current (IE = 0)
VCB = 30 V VCB = 30 V
TC = 150 oC
IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗
Emitter Cut-off Current (IC = 0)
Collector-Base Breakdown Voltage (IE = 0)
Collector-Emitter Breakdown Voltage (IB = 0)
Emitter-Base Breakdown Voltage (IC = 0)
Collector-Emitter Saturation Voltage
VEB = 5 V IC = 10 µA
IC = 2 mA
IE = 10 µA
IC = 10 mA IC = 100 mA
IB = 0.5 mA IB = 5 mA
VBE(sat)∗ Bas...