C3563

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 600 V wwwVCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 40 W 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SC3563 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 450 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=B 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 1.0 V 1.5 V 100 μA IEBO Emitter Cutoff Current i.cnhFE-1 DC Current Gain www.iscsemhFE-2 DC Current Gain VEB= 7V; IC= 0 IC= 0.5A; VCE= 5V IC= 4A; VCE= 5V 20 8 1 mA isc Website：www.iscsemi.cn 2 ...