SST74

LSJ74, SST74 ULTRA LOW NOISE SINGLE P-CHANNEL JFET FEATURES ULTRA LOW NOISE (f = 1kHz) en = 0.9nV/√Hz HIGH GAIN Gfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = 1.0nA LOW CAPACITANCE CRSS = 32pF IMPROVED SECOND SOURCE REPLACEMENT FOR 2SJ74 ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Forward Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage -55 to +150°C -55 to +135°C 400mW IG(F) = -10mA VGDS = 25V VGSS = 25V TO 92 TOP VIEW SOT-89 TOP VIEW * For equivalent N-Channel, see LSK170 family. ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX BVGDS Gate to Drain Breakdown Voltage 25 VGS(OFF) Gate to Source Pinch-off Voltage 0.15 2 LSJ74A -2.6 -6.5 IDSS Drain to Source Saturation Current2 LSJ74B LSJ74C -6 -10 -12 -20 LSJ74D -17 -30 IG Gate Operating Current 50 IGSS Gate to Source Leakage Current 1 Gfss Full Conductance Transconductance 8 22 UNITS V mA pA nA mS en Noise Voltage 0.9 1.9 nV/√Hz 2.5 4 CISS CRSS Common Source Input Capacitance Common Source Reverse Transfer Cap. 105 32 pF CONDITIONS VDS = 0V, IG = 100µA VDS = -10V, ID = -0.1µA VDG = -10V, VGS = 0V VDG = -10V, ID = -1mA VGS = 25V, VDS = 0V VDG = -10V, VGS = 0V, f = 1kHz VDS = -10V, ID = -2mA, f = 1kHz, NBW = 1Hz VDS = -10V, ID = -2mA, f = 10kHz, NBW = 1Hz VDS...