OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated
SPD50N06...
OptiMOS® Power-
Transistor
Feature N-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated
SPD50N06S2L-13
Product Summary VDS 55 V RDS(on) 12.7 mΩ ID 50 A
P- TO252 -3-11
Type
Package
Ordering Code Marking
SPD50N06S2L-13 P- TO252 -3-11 Q67060- S7421 PN06L13
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=50 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=50A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR dv/dt
VGS Ptot
Tj , Tstg
Value
50 50 200
240
13.6 6
±20 136
-55... +175 55/175/56
Unit A
mJ
kV/µs V W °C
Page 1
2003-05-09
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
SPD50N06S2L-13
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- 0.69 1.1 K/W - - 100
- - 75 - - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 55
-
-V
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
VGS(th) 1.2 1.6
2
ID=80µA
Zero gate voltage drain current
VDS=55V, VGS=0V,...